B. Jayant Baliga

Bantval Jayant Baliga (born ) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of practical implementations of the insulated gate bipolar transistor (IGBT).

In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT.

Early life and education Baliga grew up in Jalahalli, a small village near Bangalore, India. Jayant studied at Bishop Cotton Boys' School, Bangalore. He received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute. During his childhood his father inspired him a lot. Baliga remembers reading IEEE proceeding during his high school days which were brought home by his father. He graduated from high school in 1963.

Career He worked 15 years at the General Electric Research and Development Center in Schenectady, New York. In the early 1980s, he invented the insulated gate bipolar transistor that combines sciences from two streams: Electronics engineering and Electrical engineering. It is a transistor switch that was immediately put into production once invented.

This has resulted in cost savings of over $15 trillion for consumers, and is forming a basis for smart grid. This device is in use in many machines and devices using electricity, from kitchen appliances, medical devices, and electric cars to the electric power grid itself.

He joined North Carolina State University in 1988 as a Full Professor. He was promoted to Distinguished University Professor in 1997. He continues to innovate in electronics, even as an emeritus professor.

He has founded three companies that made products based on semiconductor technologies.

Recognition Baliga is a Member of the National Academy of Engineering (1993) and the European Academy of Sciences (2005), as well as an IEEE Fellow (1983). He received the 1991 IEEE Newell Award, 1993 IEEE Morris N. Liebmann Memorial Award, 1998 IEEE J J Ebers Award, and 1999 IEEE Lamme Medal. He holds 120 U.S. patents. In 1997, Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor. In 2011, he was awarded the National Medal of Technology and Innovation, the highest award for an engineer in USA by US President Barack Obama. In 2014, he was awarded the IEEE Medal of Honor, "For the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society." In 2015, he received the Global Energy Prize for invention, development and commercialization of Insulated Gate Bipolar Transistor, which is one of the most important innovations for the control and distribution of energy. In 2016, Baliga was inducted into the National Inventors Hall of Fame.

In September 2024, it was announced that Baliga won the million Euro Millennium Technology Prize, supported by the Republic of Finland. The award ceremony is held on October 30, 2024 in Finland. He was honored for his invention in the 1980s of the Insulated Gate Bipolar Transistor (IGBT), which has dramatically increased the efficiency of devices using electricity, allowing precise digital switching of electricity. The device is used in wind and solar technology, in electric cars, in devices for maintaining or investigating human health, in kitchen appliances and more.